Aluminum nitride (AlN) is a nitride of aluminum.Its wurtzite phase(w-AlN) is a wide band gap(6.01-6.05 ev at room temperature) semiconductor material,giving it potential application for deep ultraviolet optoelectronics.Aluminum nitride is stable at high temperatures in inert atmospheres and melts at 2800 °C.In a vacuum,AlN decomposes at 1800 °C.In the air,surface oxidation occurs above 700 °C,and even at room temperature,surface oxide layers of 5-10 nm have been detected.This oxide is stable in hydrogen and carbon dioxide atmospheres up to 980 °C.
Dielectric layers in optical storage media,
Electronic substrates, chip carriers where high thermal conductivity is essential,
As a crucible to grow crystals of gallium arsenide.
Steel and semiconductor manufacturing.
Aluminum nitride (AlN)
Coefficient of elasticity
Aluminum nitride ceramic can be made as Aluminum nitride parts,Aluminum nitride structure parts,